an analytical report on rehabilitation and renovation (kermanshah - feizabad quarter)
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An analytical source-and-drain series resistance model of quarter micron MOSFETs and its influence on circuit simulation
An analytical model to describe the bias dependent series resistances and of LDD MOSFETs down to quarter micron and below is introduced. Comparing measurement and simulation results of CMOS ring oscillators it has been found that for low voltage applications ( V) an incorrect description of and can cause a simulation error of up to 30 % in the delay time of CMOS inverters.
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عنوان ژورنال:
نشریه شهرسازی و معماریجلد ۱، شماره ۴، صفحات ۸۰-۸۹
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